Dry Processing Method
- Submitted by: srninuk
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- Category: Science
- Date Submitted: 12/12/2013 11:53 AM
- Pages: 9
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Q1:
a.
R=dM/dA=MecosΦcosθ/πr2
cosΦ=h/r Φ=θ cosθ=h/r
cosΦcosθ=h2/r2 r2=h2+l2
R=Meh2/(h2+l2)/π(h2+l2)
R=Meh2/π(h2+l2)2
b.
Highest deposition rate
When the l=0, the cosΦ and cosθ both equal to 1,the point is right above the source ,it's at the highest deposition rate.
Lowest deposition rate
When the r=∞, the cosΦ and cosθ both equal to 0, the point is farthest from the source, it's at the lowest deposition rate.
c.
d/d0=R/R0 R0=Me/πh2
d/d0= (MecosΦcosθ)/πr2/Me/πh2
d/d0=1/(1+l2/h2)2
d.
d/d0=1/(1+(l/h) 2)2 | | |
Table in excel Q1
See the graph above, it shows that when the source is farther from the wafer the d/d0 is increased. If choose the higher value of h, we will get more uniform thinkness. If we put the wafer far from the source, the deposition time will be longer.
e.
r0=r0 Φ=θ
cosθ=cosΦ=r/2/r0
R=MecosΦcosθ/πr2
R=Me(r/2/r0)2/πr2
R=Me/4πr0
Q2a: Pre-deposition
t=100
x | t | x/(4Dt)^0.5 | Cs |
1.00E-10 | 100 | 1.58E-02 | 9.82E+19 |
3.00E-10 | 100 | 0.047434 | 9.47E+19 |
6.00E-10 | 100 | 0.094868 | 8.93E+19 |
9.00E-10 | 100 | 0.142302 | 8.41E+19 |
1.00E-09 | 100 | 0.158114 | 8.23E+19 |
3.00E-09 | 100 | 0.474342 | 5.02E+19 |
6.00E-09 | 100 | 0.948683 | 1.80E+19 |
9.00E-09 | 100 | 1.423025 | 4.42E+18 |
1.00E-08 | 100 | 1.581139 | 2.53E+18 |
3.00E-08 | 100 | 4.743416 | 1.97E+09 |
6.00E-08 | 100 | 9.486833 | 4.85E-21 |
9.00E-08 | 100 | 14.23025 | 4.49E-70 |
t=300
x | t | x/(4Dt)^0.5 | Cs |
1.00E-10 | 300 | 0.009129 | 9.90E+19 |
3.00E-10 | 300 | 0.027386 | 9.69E+19 |
6.00E-10 | 300 | 0.054772 | 9.38E+19 |
9.00E-10 | 300 | 0.082158 | 9.08E+19 |
1.00E-09 | 300 | 0.091287 | 8.97E+19 |
3.00E-09 | 300 | 0.273861 | 6.99E+19 |
6.00E-09 | 300 | 0.547723 | 4.39E+19 |
9.00E-09 | 300 | 0.821584 | 2.45E+19 |
1.00E-08 | 300 | 0.912871 | 1.97E+19 |
3.00E-08 | 300 | 2.738613 | 1.08E+16 |
6.00E-08 | 300 | 5.477226 | 9.49E+05 |
9.00E-08 | 300 | 8.215838 | 3.30E-11 |
t=600
x | t |...
a.
R=dM/dA=MecosΦcosθ/πr2
cosΦ=h/r Φ=θ cosθ=h/r
cosΦcosθ=h2/r2 r2=h2+l2
R=Meh2/(h2+l2)/π(h2+l2)
R=Meh2/π(h2+l2)2
b.
Highest deposition rate
When the l=0, the cosΦ and cosθ both equal to 1,the point is right above the source ,it's at the highest deposition rate.
Lowest deposition rate
When the r=∞, the cosΦ and cosθ both equal to 0, the point is farthest from the source, it's at the lowest deposition rate.
c.
d/d0=R/R0 R0=Me/πh2
d/d0= (MecosΦcosθ)/πr2/Me/πh2
d/d0=1/(1+l2/h2)2
d.
d/d0=1/(1+(l/h) 2)2 | | |
Table in excel Q1
See the graph above, it shows that when the source is farther from the wafer the d/d0 is increased. If choose the higher value of h, we will get more uniform thinkness. If we put the wafer far from the source, the deposition time will be longer.
e.
r0=r0 Φ=θ
cosθ=cosΦ=r/2/r0
R=MecosΦcosθ/πr2
R=Me(r/2/r0)2/πr2
R=Me/4πr0
Q2a: Pre-deposition
t=100
x | t | x/(4Dt)^0.5 | Cs |
1.00E-10 | 100 | 1.58E-02 | 9.82E+19 |
3.00E-10 | 100 | 0.047434 | 9.47E+19 |
6.00E-10 | 100 | 0.094868 | 8.93E+19 |
9.00E-10 | 100 | 0.142302 | 8.41E+19 |
1.00E-09 | 100 | 0.158114 | 8.23E+19 |
3.00E-09 | 100 | 0.474342 | 5.02E+19 |
6.00E-09 | 100 | 0.948683 | 1.80E+19 |
9.00E-09 | 100 | 1.423025 | 4.42E+18 |
1.00E-08 | 100 | 1.581139 | 2.53E+18 |
3.00E-08 | 100 | 4.743416 | 1.97E+09 |
6.00E-08 | 100 | 9.486833 | 4.85E-21 |
9.00E-08 | 100 | 14.23025 | 4.49E-70 |
t=300
x | t | x/(4Dt)^0.5 | Cs |
1.00E-10 | 300 | 0.009129 | 9.90E+19 |
3.00E-10 | 300 | 0.027386 | 9.69E+19 |
6.00E-10 | 300 | 0.054772 | 9.38E+19 |
9.00E-10 | 300 | 0.082158 | 9.08E+19 |
1.00E-09 | 300 | 0.091287 | 8.97E+19 |
3.00E-09 | 300 | 0.273861 | 6.99E+19 |
6.00E-09 | 300 | 0.547723 | 4.39E+19 |
9.00E-09 | 300 | 0.821584 | 2.45E+19 |
1.00E-08 | 300 | 0.912871 | 1.97E+19 |
3.00E-08 | 300 | 2.738613 | 1.08E+16 |
6.00E-08 | 300 | 5.477226 | 9.49E+05 |
9.00E-08 | 300 | 8.215838 | 3.30E-11 |
t=600
x | t |...